FSF - Process Technology
FSF - Process Technology description
ams provides a variety of production proven and industry standard process technologies. The core technologies consist of 0.18µm, 0.35µm and 0.80µm digital and mixed signal CMOS, High-Voltage CMOS and BICMOS processes. As all base processes are compatible with major semiconductor manufacturers, alternative sourcing can be accommodated at minimal effort.
FSF - Procsess Technology - Roadmap
ams is demonstrating its industry leadership in the area of analog and mixed signal wafer manufacturing with a broad range of specialty processes. The special process features and available optimized devices support highly efficient product designs and high performance.
Our analog mixed signal proven process technologies combined with highly accurate process characterization and modeling and ams' advanced foundry services are the best premise to meet the unique business requirements of our customers.
FSF - Process Technology - Longevity
ams truly understands its customers requirements for very long product life cycles and long-term availability of processes. As a well-recognized and well-established supplier to the automotive and medical markets, ams provides long-term supply of its process technologies and guarantees availability for more than 15 years in average.
FSF - Process Technology - CMOS
The ams specialty CMOS process portfolio includes a 0.18µm, 0.35µm and a 0.80µm CMOS process family.
The ams C18 process is the base technology for ams’ advanced 0.18µm process family. The Mixed-Signal CMOS process C18 is equivalent to GlobalFoundries' industry proven foundry process technology CMOS7RF and offers highest integration density up to 152kGates/mm² at up to 6 levels of metal, supply voltages from 1.8V to 5.0V and ESD protection cells with up to 8kV HBM level.
- 0.18µm CMOS process details (aC18)
- 0.18µm CMOS Technology Selection Guide (aC18)
ams´ 0.35µm CMOS process family has been transferred from TSMC and is fully compatible with TSMC 0.35µm mixed signal process. High density CMOS standard cell library optimized for synthesis and 3- and 4-layer routing guarantees high gate densities. Peripheral cell libraries are available for 3.3V and 5V with high driving capabilities and excellent ESD performance. Qualified digital macro blocks (RAM, diffusion programmable ROM and DPRAM) are available on request.
0.35µm CMOS process details (C35)
0.35µm Opto-CMOS process details (C35O)
0.35µm Technology Selection Guide (C35)
ams' mature 0.80µm CMOS process family provides analog/mixed performance at low process complexity.
- 0.80µm CMOS process details (CXB)
- 0.80µm Technology Selection Guide (CXB)
Additional process options
- Embedded memories:
low noise CMOS
FSF - Process Technology - low noise
Low Noise CMOS
ams' High Performance Analog Low Noise CMOS process (“A30”) provides superior noise performance and is realized as an optical shrink by a factor of 0.9 from ams’ advanced 0.35µm High-Voltage CMOS process family.
0.30µm High Performance Analog Low Noise CMOS process:
The A30 High Performance Analog Low Noise CMOS process is based on ams’ advanced 0.35μm process family. The advanced A30 process is manufactured in ams’ state of the art 200mm fabrication facility ensuring very low defect densities and high yields. It offers 3-4 metal layers and a set of active devices optimized for ultra-low noise applications. The A30 process also includes a set of passive devices such as high resistive poly and high precision poly resistors, PIP capacitors as well as an improved MOS varactor.
- 0.30µm High Performance Analog Low Noise CMOS (A30)
- 0.30µm High Performance Analog Low Noise CMOS Technology Selection Guide (A30)
high voltage CMOS
FSF - Process Technology - High Voltage
High Voltage Processes
Our high voltage process platform supporting 0.18µm, 0.35µm und 0.80µm processes is optimized for complex mixed signal circuits up to 120V operating conditions.
In addition to the standard CMOS transistors, a variety of high voltage transistors are available: HV-NMOS, -PMOS, -DMOS transistors, N-junction FETS, isolated NPN bipolar transistors, and isolated LV-NMOS transistors.
High voltage and standard devices can be easily combined into the same chip. Low power consumption and fast switching speed provide a wide range of applications in the automotive and industrial segments. Further applications are targeted towards high precision analog Front-ends for sensors and transducers.
In combination with our proven mixed signal libraries, the new process family represents the ideal solution for high voltage designs.
The ams “H18” process provides leading edge 0.18μm High Voltage technology based on a proprietary scalable HV device architecture. Jointly developed with IBM, the 0.18µm High-Voltage CMOS process is the 6th generation of continuously improved High-Voltage CMOS technologies developed by ams.
- 0.18µm High-Voltage CMOS (aH18)
- 0.18µm High-Voltage Technology Selection Guide (aH18)
The ams “H35” process is optimized for complex mixed-signal circuits up to 120V operating conditions
- 0.35µm High-Voltage CMOS (H35)
- 0.35µm High-Voltage Technology Selection Guide (H35)
ams' mature 0.80µm High-Voltage CMOS process family offers analog/mixed performance and high voltage capabilities at low process complexity.
- 0.80µm High-Voltage CMOS (CXZ)
- 0.80µm High-Voltage Technology Selection Guide (CXZ)
FSF - Process Technology - BiCMOS
BiCMOS and SiGe BiCMOS technologies
ams' BiCMOS and SiGe-BiCMOS processes are designed to support advanced RF design with highest performance and lowest process complexity.
High speed SiGe HBT transistors with lowest noise figures enable designs for operating frequencies up to 7GHz with current consumptions significant lower than comparable designs based on conventional CMOS RF processes. These advanced processes offer high-speed bipolar-transistors with excellent analog performance, such as high fmax and low noise, complementary MOS transistors, very low-parasitic linear capacitors, linear resistors and spiral inductors. The careful characterization and modeling of all active, passive, and parasitic devices of this process result in simulation models for different circuit simulators guarantees the optimum use of these new processes.
ams’ 0.35μm SiGe-BiCMOS process is based on the industry’s standard 0.35μm mixed-signal CMOS process with the extension of additional high performance analog oriented Si-Ge HBT transistor modules. This advanced RF-process offers high-speed HBT-transistors with excellent analog performance such as high fmax and low noise as well as complementary MOS transistors with the option of 5V I/O CMOS transistors. A full set of accurately modeled analog and RF devices implemented in ams’ leading edge design kit (hitkit) com-plements this high-performance process. It comprises devices such as highly linear precision capacitors (either as Poly / Poly or Metal / Metal versions), linear resistors, high quality va-ractors and thick Metal 4 spiral inductors.
- 0.35µm SiGe-BiCMOS process (S35)
- 0.35µm SiGe-BiCMOS Technology Selection Guide (S35)
FSF - Process Technology - Embedded Flash
0.35µm Embedded Flash Technology
With its 0.35µm embedded Flash technologies, ams provides robust embedded non-volatile memory processes for SoC solutions (System on Chip) in automotive, industrial and consumer applications like RFID, Smart Cards, Sensor Interfaces, Micro controller applications, Trimming applications and others.
Key Features embedded Flash
Based on the 0.35µm CMOS process and 0.35µm High-Voltage CMOS process, the embedded Flash technology offers the following features:
- Very high reliability (data retention >20 years @ 125°C, endurance 100k)
- High temperature capability up to 170°C (suitable for automotive applications)
- Low power consumption
- Full customizable Flash or EEPROM blocks
- EEPROM memory blocks accessible like a static RAM
- Full modularity with 0.35µm CMOS base process C35 enabling reuse of digital library and IP blocks
With just a few additional mask levels, ams offers a very competitive, high-performance process technology to its customers.The very reliable embedded EEPROM/Flash blocks offer low power operation and high data retention over an extended temperature range by using a proven PMOS-based NVM technology. The memory blocks are available as add-on process modules to the 0.35µm CMOS and High-Voltage CMOS processes and can also be configured as EEPROM blocks or Flash memories without any process changes.
- 0.35µm embedded EEPROM CMOS process (C35EE)
- 0.35µm embedded EEPROM High-Voltage CMOS process (H35EE)